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HEXFET® Power MOSFETs

International Rectifier and Digi-Key offer logic level trench MOSFETs

HEXFET® Power MOSFETs International Rectifier's logic level gate drive trench HEXFET® power MOSFETs feature benchmark on-state resistance (RDS(on)) and high package current ratings for high power DC motors, power tools, industrial batteries and power supply applications. Utilizing IR’s latest trench technology, this family of benchmark MOSFETs offers a low RDS(on) at 4.5Vgs to significantly improve thermal efficiency. Additionally, the devices’ higher current rating provides more guard band from unwanted transients and reduces part count in parallel-type topologies where several MOSFETs share high current. With a package current rating of up to 195A, the TO-220 package delivers more than 60% improvement over typical package ratings.
Applications Benefits
  • DC motor drive
  • High efficiency synchronous rectification in SMPS
  • Uninterruptible power supply
  • High speed power switching
  • Hard switched and high frequency circuits
  • Improved gate, avalanche and dynamic dV/dt ruggedness
  • Fully characterized capacitance and avalanche SOA
  • Enhanced body diode dV/dt and dI/dt capability
    • RoHS compliant
  • Very low RDS(ON) at 4.5Vgs
  • Optimized for logic level drive
  • Superior R*Q at 4.5Vgs

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Digi-Key P/N Mfg. P/N Vvdss Id @ 25°C RDS(on) Max Qg Typ
IRLB3034PBF-ND IRLB3034PBF 40V 195A 2.0mΩ @ 4.5Vgs 108nC @ 4.5Vgs IRLB3034PBF Datasheet
IRLB3036PBF-ND IRLB3036PBF 60V 195A 2.8mΩ @ 4.5Vgs 91nC @ 4.5Vgs IRLB3036PBF Datasheet
IRLB4030PBF-ND IRLB4030PBF 100V 180A 4.5mΩ @ 4.5Vgs 87nC @ 4.5Vgs IRLB4030PBF Datasheet