In the linear mode, a power MOSFET is subjected to high thermo-electrical stress caused by the simultaneous occurrence of high drain voltage and current resulting in high power dissipation. IXYS has optimized the internal structure of these MOSFETs achieving an extended “forward bias safe operating area” (FBSOA) capability to overcome the limitations posed by conventional power MOSFETs operating in the current saturation region. This allows for a larger operating “window” as dictated by the power limitations of the device, resulting in improved ruggedness and reliability. These extended FBSOA Power MOSFETs are not intended for high speed switching applications.
IXYS provides a wide selection of extended FBSOA Linear L2™ Power MOSFETs. Drain source voltage ratings (Vds) include 250V, 500V, and 600V. Drain currents range from 15A to 90A. Package options include a variety of international standard packages. These package options include the TO-247, TO-220, TO-264, TO-3P, TO-268, SOT-227, and PLUS247. Other key attributes of the Linear L2 Power MOSFET family include avalanche capabilities and a guaranteed FBSOA at 75°C.
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