HEXFET® Power MOSFETs

International Rectifier and Digi-Key offer logic level trench MOSFETs

International Rectifier's logic level gate drive trench HEXFET® power MOSFETs feature benchmark on-state resistance (RDS(on)) and high package current ratings for high power DC motors, power tools, industrial batteries and power supply applications. Utilizing IR’s latest trench technology, this family of benchmark MOSFETs offers a low RDS(on) at 4.5Vgs to significantly improve thermal efficiency. Additionally, the devices’ higher current rating provides more guard band from unwanted transients and reduces part count in parallel-type topologies where several MOSFETs share high current. With a package current rating of up to 195A, the TO-220 package delivers more than 60% improvement over typical package ratings.

Applications	Benefits
DC motor drive High efficiency synchronous rectification in SMPS Uninterruptible power supply High speed power switching Hard switched and high frequency circuits	Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche SOA Enhanced body diode dV/dt and dI/dt capability Very low RDS(ON) at 4.5Vgs Optimized for logic level drive Superior R*Q at 4.5Vgs

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Digi-Key P/N	Mfg. P/N	Vvdss	Id @ 25°C	RDS(on) Max	Qg Typ
IRLB3034PBF-ND	IRLB3034PBF	40V	195A	2.0mΩ @ 4.5Vgs	108nC @ 4.5Vgs
IRLB3036PBF-ND	IRLB3036PBF	60V	195A	2.8mΩ @ 4.5Vgs	91nC @ 4.5Vgs
IRLB4030PBF-ND	IRLB4030PBF	100V	180A	4.5mΩ @ 4.5Vgs	87nC @ 4.5Vgs