IXTP32P05T & IXTP28P065T
This new family of P-Channel devices capitalize on benefits derived from IXYS’ advanced trench cell technology commonly implemented in their portfolio of industry recognized power devices. They feature an ultra low on-resistance (Rdson) and gate charge (Qg), minimizing conduction and switching losses while promoting improved operating and thermal efficiencies.
These devices are ideal for "high side" switching applications where a simple drive circuit referenced to ground can be employed, bypassing additional "high side" driver circuitry commonly involved when using an N-Channel MOSFET. This enables designers to reduce component count, thereby improving drive circuit simplicity and over-all component cost structure. Furthermore, this allows the design of a complementary power output stage with a corresponding IXYS N-Channel MOSFET for a power half bridge stage with a simple drive circuit.
The IXTP32P05T (-50V, -32A, Qg = 46nC, Rdson = 36mOhms) and IXTP28P065T (-65V, -28A, Qg = 46nC, Rdson = 45mOhms) are some examples that illustrate the superior electrical and thermal efficiencies presented by the TrenchP™ P-Channel Power MOSFET family. Additional features include an extended forward bias safe operating area (FBSOA), fast switching performance, and excellent avalanche capabilities.
These products are available to support applications requiring voltage and current ratings from -50V to -150V and -18A to -140A. Package options include the standard low cost through-hole TO-220 and surface mount TO-263 package. Common applications that will greatly benefit from these devices include high side or load switching, DC/DC converters, high current regulators, DC Choppers, CMOS high power amplifiers, push-pull amplifiers, and power solid state relays.
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